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Results 1 to 25 of 1373

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Effects of atomic scale roughness at metal/insulator interfaces on metal work functionSANLIANG LING; WATKINS, Matthew B; SHLUGER, Alexander L et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 45, pp 19615-19624, issn 1463-9076, 10 p.Article

Tunable work function dual metal gate technology for bulk and non-bulk CMOSLEE, Jaehoon; HUICAI ZHONG; SUH, You-Seok et al.IEDm : international electron devices meeting. 2002, pp 359-362, isbn 0-7803-7462-2, 4 p.Conference Paper

Measurement of work function using an electron gun in the retarding field regimeBEN-SHALOM, A; SEIDMAN, A; CROITORU, N et al.Thin solid films. 1990, Vol 186, Num 2, pp L55-L59, issn 0040-6090Article

The influence of adsorption desorption processes on the work function of the cathode made of carbon nanotubesBATURIN, A. S; BORMASHOV, V. S; KNYAZEV, A. I et al.International Vacuum Nanoelectronics Conference. 2004, pp 28-29, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Décompositions de l'énergie des électrons secondaires émis par l'arséniure de gallium avec l'affinité électronique négativeANDRONOV, A.N; STUCHINSKIJ, G.B; YANYUSHKIN, E.I et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 23-30, issn 0367-3294Article

Build-up of symmetry breaking using a titanium suboxide in bulk-heterojunction solar cellsJUNG HWA SEO; KIM, Heejoo; CHO, Shinuk et al.PCCP. Physical chemistry chemical physics (Print). 2012, Vol 14, Num 12, pp 4062-4065, issn 1463-9076, 4 p.Article

Investigations concerning the work function of doped graphiteKYAS, A; FLEISCHHAUER, J; STEINMETZ, E et al.Plasma chemistry and plasma processing. 1993, Vol 13, Num 2, pp 223-235, issn 0272-4324Article

Reduction of the work function on Mo(100) surface covered with ZrO2NAKANE, Hideaki; SATOH, Shinya; ADACHI, Hiroshi et al.International Vacuum Nanoelectronics Conference. 2004, pp 136-137, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

The nonvibrating Kelvin probe and its application for monitoring surface wearZANORIA, E. S; HAMALL, K; DANYLUK, S et al.Journal of testing and evaluation. 1997, Vol 25, Num 2, pp 233-238, issn 0090-3973Conference Paper

Theoretical analysis of work function oscillations during growth of thin epitaxial filmsKANTER, Y. O.Surface science. 1989, Vol 219, Num 3, pp 437-444, issn 0039-6028, 8 p.Article

Interaction de l'hydrogène et de l'oxygène sur l'argent polycristallinBELYAEVA, M. E.Èlektrohimiâ. 1988, Vol 24, Num 10, pp 1427-1430, issn 0424-8570Article

Polymer light-emitting diodes; from materials to devicesBERNTSEN, A; CROONEN, Y; CUIJPERS, R et al.SPIE proceedings series. 1997, pp 264-271, isbn 0-8194-2570-2Conference Paper

The electronic properties and control of semiconductor interfacesWOODALL, J. M; KIRCHNER, P. D; FREEOUF, J. L et al.Corrosion science. 1990, Vol 31, pp 53-58, issn 0010-938XConference Paper

Measuring thermionic emission of W-Al2O3 and W-LaCrO3 cermets = Mesure de l'émission thermionique des cermets W-Al2O3 et W-LaCrO3PENDERS-VANKOVA, E; GUBBELS, G. H. M; WOLFF, L. R et al.High Temperatures. High Pressures (Print). 1986, Vol 18, Num 6, pp 689-696, issn 0018-1544Article

Effective work function of NiSi/HfO2 gate stacks measured with X-ray photoelectron spectroscopyLEBEDINSKII, Yu. Yu; ZENKEVICH, A. V.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 649-652, issn 0026-2714, 4 p.Conference Paper

Relationship between effective work functions and noise powers of emission currents in nickel-deposited field emittersGOTOH, Y; NAGAO, M; MATSUBARA, M et al.Japanese journal of applied physics. 1996, Vol 35, Num 10A, pp L1297-L1300, issn 0021-4922, 2Article

Surface science and electrochemistry : concepts and problemsTRASATTI, S.Surface science. 1995, Vol 335, Num 1-3, pp 1-9, issn 0039-6028Conference Paper

Work function investigatins of alkali-coadsorbate systemsHESKETT, D; TANG, D; SHI, X et al.Journal of physics. Condensed matter (Print). 1993, Vol 5, Num 27, pp 4601-4610, issn 0953-8984Article

A new method for the work-function difference determination using buried-channel MOS transistorsINIEWSKI, K.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 1, pp 152-153, issn 0018-9383, 1Article

Electronic mechanism for alkali-metal-promoted oxidation of semiconductorsHELLSING, B.Physical review. B, Condensed matter. 1989, Vol 40, Num 6, pp 3855-3861, issn 0163-1829, 7 p.Article

Experimental investigation of the dependence of barrier height on metal work function for metal-SiO2-p-Si (MIS) Schottky-Barrier diodes in the presence of inversionCHATTOPADHYAY, P; KUMAR, V.Solid-state electronics. 1988, Vol 31, Num 2, pp 143-146, issn 0038-1101Article

Jellium work function for all electron densitiesPERDEW, J. P; YUE WANG.Physical review. B, Condensed matter. 1988, Vol 38, Num 17, pp 12228-12232, issn 0163-1829Article

Work function and dipole barrier of sputter-cleaned Fe-Ni alloy surfaces = Travail de sortie et barrière dipolaire de surfaces d'alliage Fe-Ni nettoyé par pulvérisationMAEDA, T; SAITO, S.Japanese journal of applied physics. 1986, Vol 25, Num 11, pp 1623-1627, issn 0021-4922Article

Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gatesMASZARA, W. P; KRIVOKAPIC, Z; KING, P et al.IEDm : international electron devices meeting. 2002, pp 367-370, isbn 0-7803-7462-2, 4 p.Conference Paper

Thermochemistry in the BaO . Sc2O3 . WO3 ternary systemMAGNUS, S. H; HILL, D. N; OHLINGER, W. L et al.Applied surface science. 1997, Vol 111, pp 50-55, issn 0169-4332Conference Paper

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